| PART |
Description |
Maker |
| 115-455 |
50 Ohms nominal
|
JFW Industries, Inc.
|
| 115-460 |
50 Ohms Nominal
|
JFW Industries, Inc.
|
| 115-005-18 |
50 Ohms nominal
|
JFW Industries, Inc.
|
| 115-003-18 |
50 Ohms nominal
|
JFW Industries, Inc.
|
| 115-525 |
50 Ohms Nominal
|
JFW Industries, Inc.
|
| C-L17DM537423 |
impedance-50 ohms nominal
|
Amphenol Corporation
|
| KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica
|
SANYO
|
| KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica
|
SANYO
|
| D1B0510 D1B051D D1A0510 D1A051D D2A0510 D1B1210 D1 |
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 5.
Reed relay. Contact form 1A SPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B SPDT-CO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 24.
|
Global Components & Controls
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| PEWGHW9000 |
unless otherwise specified all dimensions are nominal
|
Pasternack Enterprises,...
|
|
